By Jane K Winn, Louis de Koker
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As a result, developers have produced semiconductor materials that are not so sensitive to temperature, inexpensive, operate at high frequencies, have low power dissipation, and internal noise of the transistor. A device, which is more stable both mechanically and electrically, has been constructed by forming junctions rather than point contacts. General classes of transistors that are used in electronics today are as follows: - bipolar junction transistors (BJT); junction field-effect transistors (JFET); metal-oxide semiconductor field-effect transistors (MOSFET) up to some kilowatts, hundreds amperes, and tenths gigahertz; insulated-gate bipolar transistors (IGBT) up to thousands of kilowatts, some kiloamperes, and hundreds kilohertz.
Although the current direction changes, the thyristor remains opened until the current attains its peak negative value IR(max). The voltage of the device remains small and positive. During the next time intervals of the reverse recovery time (t4, t5), the SCR will switch off and the reverse voltage UR is stabilized. At the end of the turn-off process, the excess carriers remain in the medium layers and recombine until the forward voltage appears. it’s an interesting world Please click the advert Get under the skin of it.
47 Fig. 46 Data sheets. In data sheets, such parameters of IGBTs are usually shown as: signature, collectoremitter voltage UCE, maximum collector current IC max, and maximum power Pmax. Examples are in the following data sheet of IGBTs: UCE, V IC max , A Pmax, W IRGPH40U 1200 30 160 IRGPH50F 120 45 200 IRGDDN200M12 1200 200 1800 IRGDDN600K06 600 600 2600 IGBT Summary. The main features of the IGBT are as follows: - the highest power capabilities up to 1700 kVA, 2000 V, 800 A; thanks to the lower resistance than that of the MOSFET, the heating losses of the IGBT are low too; highest switching capabilities; forward voltage drop is 2 to 3 V, that is higher than that of a bipolar transistor but lower than that of the MOSFET; due to the negative temperature coefficient, when the temperature rises, the power and heating is lowed, therefore, the device withstands the overloading and the operation in parallel well; the reliability is higher than with the FET thanks to the absence of a secondary breakdown; relatively simple voltage controlled gate driver and low gate current.